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APTM120H80FT3G Full bridge MOSFET Power Module VDSS = 1200V RDSon = 800m typ @ Tj = 25C ID = 14A @ Tc = 25C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Power MOS 8TM Fast FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged * Very low stray inductance - Symmetrical design * Kelvin source for easy drive * Internal thermistor for temperature monitoring * High level of integration 16 15 28 27 26 25 29 30 23 22 20 19 18 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ... Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Each leg can be easily paralleled to achieve a phase leg of twice the current capability * RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25C Tc = 80C Max ratings 1200 14 10 90 30 960 357 12 Unit V August, 2009 1-5 APTM120H80FT3G - Rev 0 A V m W A Tc = 25C These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTM120H80FT3G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions Tj = 25C VDS = 1200V VGS = 0V Tj = 125C VGS = 10V, ID = 12A VGS = VDS, ID = 2.5mA VGS = 30 V Min Typ Max 250 1000 960 5 100 Unit A m V nA 3 800 4 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 600V ID = 12A Resistive switching @ 25C VGS = 15V VBus = 800V ID = 12A RG = 2.2 Min Typ 6696 615 80 260 42 120 45 27 145 42 ns nC Max Unit pF Source - Drain diode ratings and characteristics Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery trr Qrr Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25C Tc = 80C VGS = 0V, IS = - 12A IS = - 12A VR = 100V diS/dt = 100A/s Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min Typ Max 14 10 1.1 25 270 640 Unit A V V/ns ns C 1.3 3.5 dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 12A di/dt 1000A/s VDD 800V Tj 125C www.microsemi.com 2-5 APTM120H80FT3G - Rev 0 August, 2009 APTM120H80FT3G Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Min 4000 -40 -40 -40 2.5 Typ Max 0.35 150 125 100 4.7 110 Unit C/W V C N.m g Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 R25/R25 B25/85 B/B Characteristic Resistance @ 25C T25 = 298.15 K TC=100C RT = R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25 Min Typ 50 5 3952 4 Max Unit k % K % SP3 Package outline (dimensions in mm) 1 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTM120H80FT3G - Rev 0 August, 2009 17 28 APTM120H80FT3G Typical Performance Curve Low Voltage Output Characteristics 30 ID, Drain Current (A) ID, Drain Current (A) 25 20 15 10 TJ=125C VGS=10V TJ=25C Low Voltage Output Characteristics 20 TJ=125C 15 VGS=6, 7, 8 &9V 5V 10 5 5 0 0 5 10 15 20 4.5V 0 0 5 10 15 20 25 30 VDS, Drain to Source Voltage (V) RDSon, Drain to Source ON resistance Normalized RDS(on) vs. Temperature VDS, Drain to Source Voltage (V) Transfert Characteristics 20 ID, Drain Current (A) VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle 3 2.5 2 1.5 1 0.5 0 25 VGS=10V ID=12A 15 TJ=125C 10 TJ=25C 5 0 50 75 100 125 150 0 1 2 3 4 5 6 TJ, Junction Temperature (C) Gate Charge vs Gate to Source 12 VGS, Gate to Source Voltage 10 8 6 4 2 0 0 40 80 120 160 200 240 280 Gate Charge (nC) VDS=960V ID=12A TJ=25C VDS=240V VDS=600V VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 10000 Ciss C, Capacitance (pF) 1000 Coss 100 Crss 10 August, 2009 APTM120H80FT3G - Rev 0 0 50 100 150 200 VDS, Drain to Source Voltage (V) www.microsemi.com 4-5 APTM120H80FT3G Drain Current vs Source to Drain Voltage ISD, Reverse Drain Current (A) 50 40 TJ=125C 30 20 10 0 0 0.2 0.4 0.6 0.8 1 1.2 VSD, Source to Drain Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 TJ=25C Thermal Impedance (C/W) 0.9 0.3 0.7 0.2 0.5 0.3 0.1 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTM120H80FT3G - Rev 0 Microsemi reserves the right to change, without notice, the specifications and information contained herein August, 2009 |
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